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Advances in Materials Research Volume 7, Number 1, October 2018 , pages 73-81 DOI: https://doi.org/10.12989/amr.2018.7.1.073 |
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Fabrication and characterization of perovskite CH3NH3Pb1-xSbxI3-3xBr3x photovoltaic devices |
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Jun Yamanouchi, Takeo Oku, Yuya Ohishi, Misaki Fukaya, Naoki Ueoka, Hiroki Tanaka and Atsushi Suzuki
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| Abstract | ||
| TiO2/CH3NH3Pb1-xSbxI3-3xBr3x-based photovoltaic devices were fabricated by a spin-coating method using mixture solutions with SbBr3. Effects of SbBr3, CsI or RbBr addition to CH3NH3PbI3 precursor solutions on the photovoltaic properties were investigated. The short-circuit current densities and photoconversion efficiencies were improved by adding a small amount of SbBr3, CsI or RbBr to the perovskite phase, which would be due to the doping effect of Sb, Br and Cs/Rb atom at the Pb, I and CH3NH3 sites, respectively. | ||
| Key Words | ||
| photovoltaic device; perovskite; SbBr3; microstructure; CsI; RbBr | ||
| Address | ||
| Department of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533, Japan | ||
