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  Volume 1, Number 3, July 2016 , pages 225-231
 open access

Design of silicon-on-nothing structure based on multi-physics analysis
Jihwan Song, Linan Zhang and Dongchoul Kim

    The formation of silicon-on-nothing (SON) structure during an annealing process from the silicon substrate including the trench structures has been considered as an effective technique to construct the structure that has an empty space under the closed flat surface. Previous studies have demonstrated the mechanism of the formation of SON structure, which is based on the surface diffusion driven by the minimization of their surface energy. Also, it has been fragmentarily shown that the morphology of SON structure can be affected by the initial design of trench (e.g., size, number) and the annealing conditions (e.g., temperature, pressure). Based on the previous studies, here, we report a comprehensive study for the design of the cavity-embedded structure (i.e., SON structure). To do this, a dynamic model has been developed with the phase field approach. The simulation results represent that the morphology of SON structures could be detailedly designed, for example the position and thickness of cavity, the thickness of top and bottom layer, according to the design parameters. This study will give us an advantage in the effective design of SON structures.
Key Words
    SON structure; morphological design; phase field model; multi-physics analysis
Jihwan Song and Dongchoul Kim:1Department of Mechanical Engineering, Sogang University, Seoul, 121-742, Korea

Linan Zhang: Department of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou, 310018, China

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