Buy article PDF
The purchased file will be sent to you
via email after the payment is completed.
US$ 35
|
Advances in Nano Research Volume 5, Number 4, December 2017 , pages 303-311 DOI: https://doi.org/10.12989/anr.2017.5.4.303 |
|
|
|
Growth features and nucleation mechanism of Ga1-x-yInxAlyN material system on GaN substrate |
||
Arpine K. Simonyan, Karen M. Gambaryan and Vladimir M. Aroutiounian
|
||
| Abstract | ||
| The continuum elasticity model is applied to investigate quantitatively the growth features and nucleation mechanism of quantum dots, nanopits, and joint QDs–nanopits structures in GaInAlN quasyternary systems. We have shown that for GaInAlN material system at the critical strain of ε* = 0.039 the sign of critical energy and volume is changed. We assume that at ε = ε* the mechanism of the nucleation is changed from the growth of quantum dots to the nucleation of nanopits. Obviously, at small misfit (ε < ε*), the bulk nucleation mechanism dominates. However, at ε > ε*, when the energy barrier becomes negative as well as a larger misfit provides a lowbarrier path for the formation of dislocations, the nucleation of pits becomes energetically preferable. The free energy of mixing for Ga1-x-yInxAlyN quasiternary system was calculated and studied and its 3D sketch was plotted. | ||
| Key Words | ||
| quantum dot; nanopit; strain energy; Gibbs free energy; immiscibility gap | ||
| Address | ||
| Department of Physics of Semiconductors and Microelectronics, Yerevan State University, 1 Alex Manoukian, Yerevan 0025, Armenia. | ||