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Advances in Nano Research
  Volume 5, Number 4, December 2017 , pages 303-311
DOI: https://doi.org/10.12989/anr.2017.5.4.303
 


Growth features and nucleation mechanism of Ga1-x-yInxAlyN material system on GaN substrate
Arpine K. Simonyan, Karen M. Gambaryan and Vladimir M. Aroutiounian

 
Abstract
    The continuum elasticity model is applied to investigate quantitatively the growth features and nucleation mechanism of quantum dots, nanopits, and joint QDs–nanopits structures in GaInAlN quasyternary systems. We have shown that for GaInAlN material system at the critical strain of ε* = 0.039 the sign of critical energy and volume is changed. We assume that at ε = ε* the mechanism of the nucleation is changed from the growth of quantum dots to the nucleation of nanopits. Obviously, at small misfit (ε < ε*), the bulk nucleation mechanism dominates. However, at ε > ε*, when the energy barrier becomes negative as well as a larger misfit provides a lowbarrier path for the formation of dislocations, the nucleation of pits becomes energetically preferable. The free energy of mixing for Ga1-x-yInxAlyN quasiternary system was calculated and studied and its 3D sketch was plotted.
 
Key Words
    quantum dot; nanopit; strain energy; Gibbs free energy; immiscibility gap
 
Address
Department of Physics of Semiconductors and Microelectronics, Yerevan State University, 1 Alex Manoukian, Yerevan 0025, Armenia.
 

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