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Advances in Nano Research
  Volume 5, Number 1, March 2017, pages 61-67
DOI: http://dx.doi.org/10.12989/anr.2017.5.1.061
 

An approach to model the temperature effects on I-V characteristics of CNTFETs
Roberto Marani and Anna G. Perri

 
Abstract     [Full Text]
    A semi-empirical approach to model the temperature effects on I-V characteristics of Carbon Nanotube Field Effect Transistors (CNTFETs) is proposed. The model includes two thermal parameters describing CNTFETbehaviour in terms of saturation drain current and threshold voltage, whose values are extracted from the simulated and trans-characteristics of the device in different temperature conditions. Our results are compared with those of a numerical model online available, obtaining I-V characteristics comparable but with a lower CPU calculation time.
 
Key Words
    nanoelectronic devices; carbon nanotube field effect transistors; modeling; device simulation; I-V characteristics; temperature effects; computer aided design
 
Address
(1) Roberto Marani:
Consiglio Nazionale delle Ricerche, Istituto di Studi sui Sistemi Intelligenti per l\'Automazione, Bari, Italy;
(2) Anna G. Perri:
Dipartimento di Ingegneria Elettrica e dell\'Informazione, Laboratorio di Dispositivi Elettronici, Politecnico di Bari, Italy.
 

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