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Advances in Nano Research Volume 5, Number 1, March 2017, pages 13-25 DOI: http://dx.doi.org/10.12989/anr.2017.5.1.013 |
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Optical dielectric function of impurity doped Quantum dots in presence of noise |
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Anuja Ghosh, Aindrila Bera and Manas Ghosh
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| Abstract [Full Text] | ||
| We examine the total optical dielectric function (TODF) of impurity doped GaAs quantum dot (QD) from the viewpoint of anisotropy, position-dependent effective mass (PDEM) and position dependent dielectric screening function (PDDSF), both in presence and absence of noise. The dopant impurity potential is Gaussian in nature and noise employed is Gaussian white noise that has been applied to the doped system via two different modes; additive and multiplicative. A change from fixed effective mass and fixed dielectric constant to those which depend on the dopant coordinate manifestly affects TODF. Presence of noise and also its mode of application bring about more rich subtlety in the observed TODF profiles. The findings indicate promising scope of harnessing the TODF of doped QD systems through expedient control of site of dopant incorporation and application of noise in desired mode. | ||
| Key Words | ||
| quantum dot; impurity; optical dielectric function; anisotropy; position-dependent effective mass; position-dependent dielectric screening function; Gaussian white noise | ||
| Address | ||
| Department of Chemistry, Physical Chemistry Section, Visva Bharati University, Santiniketan, Birbhum 731 235, West Bengal, India. | ||