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Advances in Nano Research
  Volume 3, Number 2, June 2015, pages 081-96
DOI: http://dx.doi.org/10.12989/anr.2015.3.2.081
 


Structure and optical properties of vapor grown In2O3: Ga nano-/microcrystals
Diego Leon Sanchez, Jesus Alberto Ramos Ramon, Manuel Herrera Zaldivar, Umapada Pal and Efraín Rubio Rosas

 
Abstract
    Octahedral shaped single crystalline undoped and Ga-doped indium oxide nano-and microcrystals were fabricated using vapor-solid growth process. Effects of Ga doping on the crystallinity, defect structure, and optical properties of the nano-/microstructures have been studied using scanning electron microscopy, microRaman spectroscopy, transmission electron microscopy and cathodoluminescence spectroscopy. It has been observed that incorporation of Ga does not affect the morphology of In2O3 structures due to its smaller ionic radius, and similar oxidation state as that of In. However, incorporation of Ga in high concentration (~3.31 atom %) causes lattice compression, reduces optical band gap and defect induced CL emissions of In2O3 nano-/microcrystals. The single crystalline Ga-doped, In2O3 nano-/microcrystals with low defect contents are promising for optoelectronic applications.
 
Key Words
    indium oxide; vapor-solid growth; Ga-doping; optical properties
 
Address
Diego Leon Sanchez: Facultad de Ciencias de la Electrónica, Universidad Autónoma de Puebla, 18 Sur y Av. San Claudio, Edif. 109, Puebla, Pue. 72570, Mexico
Jesus Alberto Ramos Ramon: Instituto de Física, Universidad Autónoma de Puebla, Apdo. Postal J-48, Puebla, Pue. 72570, Mexico
Manuel Herrera Zaldivar: Centro de Nanociencia y Nanotecnología, Universidad Nacional Autónoma de México, Ensenada, B.C. 22800, Mexico
Umapada Pal: Centro Universitario de Vinculación y Transferencia de Tecnología (CUVyTT), Universidad Autónoma de Puebla, 24 Sur, C.U., Puebla 72570, Mexico
Efraín Rubio Rosas: Centro Universitario de Vinculación y Transferencia de Tecnología (CUVyTT), Universidad Autónoma de Puebla, 24 Sur, C.U., Puebla 72570, Mexico
 

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