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Advances in Nano Research Volume 3, Number 1, March 2015, pages 49-54 DOI: http://dx.doi.org/10.12989/anr.2015.3.1.049 |
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Quantum modulation of the channel charge and distributed capacitance of double gated nanosize FETs |
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Ferdinand V. Gasparyan and Vladimir M. Aroutiounian
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| Abstract | ||
| The structure represents symmetrical metal electrode (gate 1) – front SiO2 layer – n-Si nanowire FET – buried SiO2 layer – metal electrode (gate 2). At the symmetrical gate voltages high conductive regions near the gate 1 – front SiO2 and gate 2 – buried SiO2 interfaces correspondingly, and low conductive region in the central region of the NW are formed. Possibilities of applications of nanosize FETs at the deep inversion and depletion as a distributed capacitance are demonstrated. Capacity density is an order to ~uF⁄cm2 . The charge density, it distribution and capacity value in the nanowire can be controlled by a small changes in the gate voltages. at the non-symmetrical gate voltages high conductive regions will move to corresponding interfaces and low conductive region will modulate non-symmetrically. In this case source-drain current of the FET will redistributed and change current way. This gives opportunity to investigate surface and bulk transport processes in the nanosize inversion channel. | ||
| Key Words | ||
| quantization; charge modulation; nanosize FET; capacity | ||
| Address | ||
| Ferdinand V. Gasparyan and Vladimir M. Aroutiounian: Department of Semiconductor Physics and Microelectronics, Yerevan State University, 1 Alex Manoogian St., Yerevan 0025, Armenia | ||