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Advances in Nano Research
  Volume 3, Number 1, March 2015, pages 49-54
DOI: http://dx.doi.org/10.12989/anr.2015.3.1.049
 


Quantum modulation of the channel charge and distributed capacitance of double gated nanosize FETs
Ferdinand V. Gasparyan and Vladimir M. Aroutiounian

 
Abstract
    The structure represents symmetrical metal electrode (gate 1) – front SiO2 layer – n-Si nanowire FET – buried SiO2 layer – metal electrode (gate 2). At the symmetrical gate voltages high conductive regions near the gate 1 – front SiO2 and gate 2 – buried SiO2 interfaces correspondingly, and low conductive region in the central region of the NW are formed. Possibilities of applications of nanosize FETs at the deep inversion and depletion as a distributed capacitance are demonstrated. Capacity density is an order to ~uF⁄cm2 . The charge density, it distribution and capacity value in the nanowire can be controlled by a small changes in the gate voltages. at the non-symmetrical gate voltages high conductive regions will move to corresponding interfaces and low conductive region will modulate non-symmetrically. In this case source-drain current of the FET will redistributed and change current way. This gives opportunity to investigate surface and bulk transport processes in the nanosize inversion channel.
 
Key Words
    quantization; charge modulation; nanosize FET; capacity
 
Address
Ferdinand V. Gasparyan and Vladimir M. Aroutiounian: Department of Semiconductor Physics and Microelectronics, Yerevan State University, 1 Alex Manoogian St., Yerevan 0025, Armenia
 

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