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Advances in Nano Research
  Volume 3, Number 1, March 2015, pages 13-27
DOI: http://dx.doi.org/10.12989/anr.2015.3.1.013
 

Interband optical properties in wide band gap group-III nitride quantum dots
K. Jaya Bala and A. John Peter

 
Abstract     [Full Text]
    Size dependent emission properties and the interband optical transition energies in group-III nitride based quantum dots are investigated taking into account the geometrical confinement. Exciton binding energy and the optical transition energy in Ga0.9In0.1N/GaN and Al0.395In0.605N /AlN quantum dots are studied. The largest intersubband transition energies of electron and heavy hole with the consideration of geometrical confinement are brought out. The interband optical transition energies in the quantum dots are studied. The exciton oscillator strength as a function of dot radius in the quantum dots is computed. The interband optical absorption coefficients in GaInN/GaN and AlInN/AlN quantum dots, for the constant radius, are investigated. The result shows that the largest intersubband energy of 41% (10%) enhancement has been observed when the size of the dot radius is reduced from 50 A to 25 A of Ga0.9In0.1N/GaN (Al0.395In0.605N /AlN) quantum dot.
 
Key Words
    oscillator strength; exciton; quantum dot
 
Address
K. Jaya Bala: Department of Physics, GTN Arts College, Dindigul-624 005, India
A. John Peter: P.G & Research Department of Physics, Government Arts College, Melur-625 106, Madurai, India
 

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