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Advances in Nano Research   Volume 2, Number 4, December 2014, pages 179-186
Effects of post anneal for the INZO films prepared by ultrasonic spray pyrolysis
Wen-How Lan, Yue-Lin Li, Yu-Chieh Chung, Cheng-Chang Yu, Yi-Chun Chou, Yi-Da Wu, Kai-Feng Huang and Lung-Chien Chen

Abstract     [Full Text]
    Indium-nitrogen co-doped zinc oxide thin films (INZO) were prepared on glass substrates in the atmosphere by ultrasonic spray pyrolysis. The aqueous solution of zinc acetate, ammonium acetate and different indium sources: indium (III) chloride and indium (III) nitrate were used as the precursors. After film deposition, different anneal temperature treatment as 350, 450, 550oC were applied. Electrical properties as concentration and mobility were characterized by Hall measurement. The surface morphology and crystalline quality were characterized by SEM and XRD. With the activation energy analysis for both films, the concentration variation of the films at different heat treatment temperature was realized. Donors correspond to zinc related states dominate the conduction mechanism for these INZO films after 550oC high temperature heat treatment process.
Key Words
    indium-nitrogen co-doped zinc oxide; anneal; resistivity
Wen-How Lan, Yue-Lin Li, Yu-Chieh Chung, Yi-Chun Chou, Yi-Da Wu: Department of Electrical Engineering, National University of Kaohsiung, Nan-Tzu 811, Kaohsiung, Taiwan
Cheng-Chang Yu, Kai-Feng Huang: Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan
Lung-Chien Chen: Department of Electro-optical Engineering, National Taipei University of Technology, Taipei 106, Taiwan

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