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Advances in Nano Research Volume 17, Number 2, August 2024 , pages 137-147 DOI: https://doi.org/10.12989/anr.2024.17.2.137 |
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Quantum transport of doped rough-edged graphene nanoribbons FET based on TB-NEGF method |
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K.L. Wong, M.W. Chuan, A. Hamzah, S. Rusli, N.E. Alias, S.M. Sultan, C.S. Lim and M.L.P. Tan
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| Abstract | ||
| Graphene nanoribbons (GNRs) are considered a promising alternative to graphene for future nanoelectronic applications. However, GNRs-based device modeling is still at an early stage. This research models the electronic properties of n-doped rough-edged 13-armchair graphene nanoribbons (13-AGNRs) and quantum transport properties of n-doped rough-edged 13-armchair graphene nanoribbon field-effect transistors (13-AGNRFETs) at different doping concentrations. Step-up and edge doping are used to incorporate doping within the nanostructure. The numerical real-space nearest-neighbour tight-binding (NNTB) method constructs the Hamiltonian operator matrix, which computes electronic properties, including the sub-band structure and bandgap. Quantum transport properties are subsequently computed using the self-consistent solution of the two-dimensional Poisson and Schrödinger equations within the non-equilibrium Green's function method. The finite difference method solves the Poisson equation, while the successive over-relaxation method speeds up the convergence process. Performance metrics of the device are then computed. The results show that highly doped, rough-edged 13-AGNRs exhibit a lower bandgap. Moreover, n-doped rough-edged 13-AGNRFETs with a channel of higher doping concentration have better gate control and are less affected by leakage current because they demonstrate a higher current ratio and lower off-current. Furthermore, highly n-doped rough-edged 13-AGNRFETs have better channel control and are less affected by the short channel effect due to the lower value of subthreshold swing and drain-induced barrier lowering. The inclusion of dopants enhances the on-current by introducing more charge carriers in the highly n-doped, rough-edged channel. This research highlights the importance of optimizing doping concentrations for enhancing GNRFET-based device performance, making them viable for applications in nanoelectronics. | ||
| Key Words | ||
| doping concentration; field-effect transistors; n-doped GNRs; performance metrics; quantum transport; rough-edged; TB-NEGF method; 13-armchair GNRs | ||
| Address | ||
| K.L. Wong, M.W. Chuan, A. Hamzah, S. Rusli, N.E. Alias, S.M. Sultan, C.S. Lim and M.L.P. Tan: Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia | ||