|
Advances in Materials Research Volume 1, Number 1, March 2012 , pages 37-49 DOI: https://doi.org/10.12989/amr.2012.1.1.037 |
||
|
Characterization of high performance CNT-based TSV for high-frequency RF applications |
||
Sukeshwar Kannan, Bruce Kim, Anurag Gupta, Seok-Ho Noh and Li Li
|
||
| Abstract | ||
| In this paper, we present modeling and characterization of CNT-based TSVs to be used in high-frequency RF applications. We have developed an integrated model of CNT-based TSVs by incorporating the quantum confinement effects of CNTs with the kinetic inductance phenomenon at high frequencies. Substrate parasitics have been appropriately modeled as a monolithic microwave capacitor with the resonant line technique using a two-polynomial equation. Different parametric variations in the model have been outlined as case studies. Furthermore, electrical performance and signal integrity analysis on different cases have been used to determine the optimized configuration for TSV-based CNTs for high frequency RF applications. | ||
| Key Words | ||
| TSV; CNT; modeling; signal integrity; high-frequency; RF applications | ||
| Address | ||
| Sukeshwar Kannan, Bruce Kim and Anurag Gupta: University of Alabama, Tuscaloosa, Alabama, 35487-0286 USA. Seok-Ho Noh: Andong National University, South Korea. Li Li: Cisco Systems, Inc., USA. | ||
