Buy article PDF
The purchased file will be sent to you
via email after the payment is completed.
US$ 35
|
Advances in Concrete Construction Volume 15, Number 1, January 2023 , pages 11-22 DOI: https://doi.org/10.12989/acc.2023.15.1.011 |
|
|
|
Physicochemical properties and autogenous healing performance of ternary blended binders composed of OPC-BFS-CSA clinker |
||
H.N. Yoon, Joonho Seo, Naru Kim, H.M. Son and H.K. Lee
|
||
| Abstract | ||
| Autogenous healing of concrete can be helpful in structural maintenance by healing cracks using a healing material created by the precipitation of calcite and by the hydration of unhydrated binder around the cracks. Against this backdrop, this study investigated the physicochemical properties and autogenous healing performance of ternary blended binder composed of ordinary Portland cement (OPC), blast furnace slag (BFS), and calcium sulfoaluminate (CSA) clinker. Ternary blended binders with various contents of OPC-BFS-CSA clinker were prepared, and their physicochemical properties and autogenous healing performances were examined using various analytical techniques and visually observed using a microscope. The obtained results indicated that increase in the BFS content accompanied the increased the amount of unreacted BFS even after 28 days of curing and had a positive effect on the autogenous healing performance due to its latent hydration. However, replacing the CSA clinker did not increase the autogenous healing performance owing to an insufficient sulfate source for the formation of ettringite. The main precipitates around the cracks were calcite, C-S-H. Other hydration products such as portlandite, monosulfate, and ettringite, which were not found in the Raman and scanning electron microscope analyses. | ||
| Key Words | ||
| autogenous healing; blast-furnace slag; blended cement calcium sulfoaluminate cement; hydration products; ordinary Portland cement | ||
| Address | ||
| (1) H.N. Yoon, Joonho Seo, Naru Kim, H.K. Lee: Department of Civil and Environmental Engineering, Korea Advanced Institute of Science and Technology, 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea; (2) H.M. Son: Device Solutions, Samsung Electronics, Samsungjeonja-ro 1, Hwaseong-si, Gyeonggi-do, 18448, South Korea. | ||
| References | ||
| ||